TY - JOUR
KW - Cooling
KW - Substrates
KW - Oxygen
KW - Strontium alloys
KW - Epitaxial strain
KW - Oxygen vacancies
KW - SrTiO
KW - Semiconducting bismuth compounds
KW - Depth distribution
KW - Film interfaces
KW - Film surfaces
KW - Oxygen pressure
KW - Oxygen-vacancy distribution
KW - Vacancies
AU - G.L Yuan
AU - L.W Martin
AU - Ramamoorthy Ramesh
AU - A Uedono
AB - The epitaxial (001)-oriented 250 nm BiFeO3 /50 nm SrRuO 3 films were deposited on DyScO3 and SrTiO3 substrates, respectively. Following the growth, the cooling in lower oxygen pressure results in the creation of oxygen vacancies at the surface of the BiFeO3 film and the epitaxial strain drives these vacancies to diffuse from the film surface to the film interface. The SrTiO3 substrate strongly absorbs oxygen vacancies from the BiFeO3 film while the DyScO3 substrate does not. Therefore, the depth distribution of oxygen vacancies depends on the oxygen pressure during cooling, the epitaxial strain, and the substrate absorbing oxygen vacancies. © 2009 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.3171939
LA - eng
M1 - 1
N1 - cited By 45
N2 - The epitaxial (001)-oriented 250 nm BiFeO3 /50 nm SrRuO 3 films were deposited on DyScO3 and SrTiO3 substrates, respectively. Following the growth, the cooling in lower oxygen pressure results in the creation of oxygen vacancies at the surface of the BiFeO3 film and the epitaxial strain drives these vacancies to diffuse from the film surface to the film interface. The SrTiO3 substrate strongly absorbs oxygen vacancies from the BiFeO3 film while the DyScO3 substrate does not. Therefore, the depth distribution of oxygen vacancies depends on the oxygen pressure during cooling, the epitaxial strain, and the substrate absorbing oxygen vacancies. © 2009 American Institute of Physics.
PY - 2009
T2 - Applied Physics Letters
TI - The dependence of oxygen vacancy distributions in BiFeO3 films on oxygen pressure and substrate
VL - 95
SN - 00036951
ER -