A study of vacancy-related defects in (pb,la)(zr,ti)o3 thin films using positron annihilation
| Publication Type | Journal Article
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| Authors | |
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| DOI |
10.1109/58.852074
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| Abstract |
The formation of vacancy-type defects in La-doped lead zirconate titanato (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10-5 Torr oxygen partial pressure after growth exhibits am increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes. © 2000 IEEE.
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| Notes |
cited By 6
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| Journal |
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
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| Volume |
47
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| Year of Publication |
2000
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| Number |
4
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| Pagination |
916-920
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| ISSN Number |
08853010
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