%0 Journal Article
%K Thin films
%K Film growth
%K Ferroelectric materials
%K Doping (additives)
%K Lead compounds
%K Doppler effect
%K Positron annihilation
%A T Fhessnegg
%A S Aggarwal
%A B Nielsen
%A Ramamoorthy Ramesh
%A D.J Keeble
%A E.H Poindcxtor
%B IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
%D 2000
%G eng
%P 916-920
%R 10.1109/58.852074
%T A study of vacancy-related defects in (pb,la)(zr,ti)o3 thin films using positron annihilation
%V 47
%X The formation of vacancy-type defects in La-doped lead zirconate titanato (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10-5 Torr oxygen partial pressure after growth exhibits am increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes. © 2000 IEEE.