TY - JOUR
KW - Thin films
KW - Film growth
KW - Ferroelectric materials
KW - Doping (additives)
KW - Lead compounds
KW - Doppler effect
KW - Positron annihilation
AU - T Fhessnegg
AU - S Aggarwal
AU - B Nielsen
AU - Ramamoorthy Ramesh
AU - D.J Keeble
AU - E.H Poindcxtor
AB - The formation of vacancy-type defects in La-doped lead zirconate titanato (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10-5 Torr oxygen partial pressure after growth exhibits am increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes. © 2000 IEEE.
BT - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
DO - 10.1109/58.852074
LA - eng
M1 - 4
N1 - cited By 6
N2 - The formation of vacancy-type defects in La-doped lead zirconate titanato (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10-5 Torr oxygen partial pressure after growth exhibits am increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes. © 2000 IEEE.
PY - 2000
SP - 916
EP - 920
T2 - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
TI - A study of vacancy-related defects in (pb,la)(zr,ti)o3 thin films using positron annihilation
VL - 47
SN - 08853010
ER -