Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices
| Publication Type | Journal Article
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| Authors | |
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| DOI |
10.1063/1.1556959
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| Abstract |
The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.
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| Notes |
cited By 28
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| Journal |
Applied Physics Letters
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| Volume |
82
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| Year of Publication |
2003
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| Number |
9
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| Pagination |
1452-1454
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| ISSN Number |
00036951
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| Keywords | |
| Research Areas | |
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