Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.