%0 Journal Article
%K Oxidation
%K Sputter deposition
%K Diffusion
%K Annealing
%K Electrodes
%K Multilayers
%K Film growth
%K Permittivity
%K Dielectric losses
%K Magnetron sputtering
%K Multilayered electrodes
%A W Fan
%A S Saha
%A J.A Carlisle
%A O Auciello
%A R.P.H Chang
%A Ramamoorthy Ramesh
%B Applied Physics Letters
%D 2003
%G eng
%P 1452-1454
%R 10.1063/1.1556959
%T Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices
%V 82
%X The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.