TY - JOUR
KW - Oxidation
KW - Sputter deposition
KW - Diffusion
KW - Annealing
KW - Electrodes
KW - Multilayers
KW - Film growth
KW - Permittivity
KW - Dielectric losses
KW - Magnetron sputtering
KW - Multilayered electrodes
AU - W Fan
AU - S Saha
AU - J.A Carlisle
AU - O Auciello
AU - R.P.H Chang
AU - Ramamoorthy Ramesh
AB - The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.
BT - Applied Physics Letters
DO - 10.1063/1.1556959
LA - eng
M1 - 9
N1 - cited By 28
N2 - The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.
PY - 2003
SP - 1452
EP - 1454
T2 - Applied Physics Letters
TI - Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices
VL - 82
SN - 00036951
ER -