@article{33696,
  keywords = {Oxidation, Sputter deposition, Diffusion, Annealing, Electrodes, Multilayers, Film growth, Permittivity, Dielectric losses, Magnetron sputtering, Multilayered electrodes},
  author = {W Fan and S Saha and J.A Carlisle and O Auciello and R.P.H Chang and Ramamoorthy Ramesh},
  title = {Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices},
  abstract = {The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.},
  year = {2003},
  journal = {Applied Physics Letters},
  volume = {82},
  number = {9},
  pages = {1452-1454},
  issn = {00036951},
  doi = {10.1063/1.1556959},
  note = {cited By 28},
  language = {eng},
}