Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto. "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589–1594. Google Scholar | DOI | BibTeX | Endnote tagged