Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

Publication Type
Journal Article
Authors
DOI
10.1063/1.1556959
Abstract
The integration of amorphous Ti-Al was investigated for Cu for fabrication of oxide thin film-based capacitors. The Cu and Ta layers remained intact through high temperature oxygen annealing due to the thin oxide layer formed on the Ti-Al surface. The results demonstrated that the Ti-Al/Cu/Ta layered structure provided a good alternative electrode technology to Pt for the fabrication of BST capacitors.
Notes
cited By 28
Journal
Applied Physics Letters
Volume
82
Year of Publication
2003
Number
9
Pagination
1452-1454
ISSN Number
00036951
Keywords
Research Areas
Download citation