(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications
| Publication Type | Journal Article
|
|---|
| Authors | |
|---|---|
| DOI |
10.1063/1.124104
|
| Abstract |
The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.
|
| Notes |
cited By 64
|
| Journal |
Applied Physics Letters
|
| Volume |
74
|
| Year of Publication |
1999
|
| Number |
21
|
| Pagination |
3194-3196
|
| Publisher |
American Institute of Physics Inc., Woodbury
|
| ISSN Number |
00036951
|
| Keywords | |
| Research Areas | |
| Download citation |