Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
Publication Type | Journal Article
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Authors | |
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DOI |
10.1002/adma.201504779
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Abstract |
Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Notes |
cited By 51
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Journal |
Advanced Materials
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Volume |
28
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Year of Publication |
2016
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Number |
15
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Pagination |
2923-2930
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Publisher |
Wiley-VCH Verlag
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ISSN Number |
09359648
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Keywords | |
Research Areas | |
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