Threading dislocation generation in epitaxial (Ba,Sr)TiO3 films grown on (001) LaAlO3 by pulsed laser deposition

Publication Type	Journal Article

Authors	I.B Misirlioglu A.L Vasiliev M Aindow S.P Alpay Ramamoorthy Ramesh
DOI	10.1063/1.1664035
Abstract	The epitaxial growth of (Ba,Sr)TiO3 (BST) films on (001) LaAlO3 by pulsed laser deposition and dislocation structures of the films were investigated. The BST films were deposited by PLD from a sintered BST target using growth conditions that results in high quality epitaxial films. The result show that the treading dislocations are not generated as the result of half-loop climb from the deposit surface. It was found that the dislocation were formed when misfit dislocations are forced away from the interface during island coalescence.
Notes	cited By 31
Journal	Applied Physics Letters
Volume	84
Year of Publication	2004
Number	10
Pagination	1742-1744
Publisher	American Institute of Physics Inc.
ISSN Number	00036951
Keywords	Microstructure Thin films Pulsed laser deposition Transmission electron microscopy Perovskite Ion beams Lanthanum compounds Epitaxial growth Single crystals X-ray Diffraction Dislocations (crystals) Barium titanate Coalescence Metallic films Shear stress Ion-beam milling Semiconductor films Threading dislocations
Organizations	No Organization
Research Areas	Ramesh Lab
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