@article{33674,
  keywords = {Microstructure, Thin films, Pulsed laser deposition, Transmission electron microscopy, Perovskite, Ion beams, Lanthanum compounds, Epitaxial growth, Single crystals, X-ray Diffraction, Dislocations (crystals), Barium titanate, Coalescence, Metallic films, Shear stress, Ion-beam milling, Semiconductor films, Threading dislocations},
  author = {I.B Misirlioglu and A.L Vasiliev and M Aindow and S.P Alpay and Ramamoorthy Ramesh},
  title = {Threading dislocation generation in epitaxial (Ba,Sr)TiO3 films grown on (001) LaAlO3 by pulsed laser deposition},
  abstract = {The epitaxial growth of (Ba,Sr)TiO3 (BST) films on (001) LaAlO3 by pulsed laser deposition and dislocation structures of the films were investigated. The BST films were deposited by PLD from a sintered BST target using growth conditions that results in high quality epitaxial films. The result show that the treading dislocations are not generated as the result of half-loop climb from the deposit surface. It was found that the dislocation were formed when misfit dislocations are forced away from the interface during island coalescence.},
  year = {2004},
  journal = {Applied Physics Letters},
  volume = {84},
  number = {10},
  pages = {1742-1744},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.1664035},
  note = {cited By 31},
  language = {eng},
}