Room-temperature ultraviolet nanowire nanolasers

Date Published
06/2001
Publication Type
Journal Article
Authors
DOI
10.1126/science.1060367
LBL Report Number
LBNL-48421
Abstract

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

Notes

LBNL-48421 NOT IN FILE

Journal
Science
Volume
292
Year of Publication
2001
Issue
5523
Pagination
1897-1899
Keywords
Organizations
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