%0 Journal Article
%K Condensation
%K Energy
%K Transportation
%K USA
%K Emission
%K Band gap
%K Laser
%K Applications
%K Ultraviolet
%K Oriented
%K Oxide
%K P
%K Time
%K Ca
%K Form
%K Process
%K Vapor
%K Excitation
%K Zinc
%K Array
%K Energies
%K Dc
%K Ha
%K Microanalysis
%K Length
%K Arrays
%K D
%K Diameter
%K Light
%K Linewidth
%K Nanometer
%K Nanowire
%K Nanowires
%K Optical gain
%K Oxide nanowires
%K Quantum
%K Room temperature
%K Room temperature
%K Sapphire
%K Sapphire substrate
%K Sapphire substrates
%K Semiconductor
%K Semiconductor nanowires
%K Storage
%K Substrate
%K Substrates
%K Vapor transport
%K Zinc oxide
%K Zinc-oxide
%K Zno
%A Michael H Huang
%A Samuel S Mao
%A Henning Feick
%A Haoquan Yan
%A Yiying Wu
%A Hannes Kind
%A Eicke R Weber
%A Richard E Russo
%A Peidong Yang
%B Science
%D 2001
%G eng
%N 5523
%P 1897-1899
%R 10.1126/science.1060367 
%T Room-temperature ultraviolet nanowire nanolasers
%V 292
%2 LBNL-48421
%8 06/2001
%) Laser
%X <p>Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis</p>