%0 Journal Article
%K condensation
%K energy
%K transportation
%K usa
%K emission
%K band gap
%K laser
%K applications
%K ultraviolet
%K oriented
%K oxide
%K p
%K time
%K ca
%K form
%K process
%K vapor
%K excitation
%K zinc
%K array
%K energies
%K dc
%K ha
%K microanalysis
%K length
%K arrays
%K d
%K diameter
%K light
%K linewidth
%K nanometer
%K nanowire
%K nanowires
%K optical gain
%K oxide nanowires
%K quantum
%K room temperature
%K room-temperature
%K sapphire
%K sapphire substrate
%K sapphire substrates
%K semiconductor
%K semiconductor nanowires
%K storage
%K substrate
%K substrates
%K vapor transport
%K zinc oxide
%K zinc-oxide
%K zno
%A Michael H Huang
%A Samuel S Mao
%A Henning Feick
%A Haoquan Yan
%A Yiying Wu
%A Hannes Kind
%A Eicke R Weber
%A Richard E Russo
%A Peidong Yang
%B Science
%D 2001
%G eng
%N 5523
%P 1897-1899
%R 10.1126/science.1060367 
%T Room-temperature ultraviolet nanowire nanolasers
%V 292
%2 LBNL-48421
%8 06/2001
%) Laser
%X <p>Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis</p>