TY - JOUR KW - Condensation KW - Energy KW - Transportation KW - USA KW - Emission KW - Band gap KW - Laser KW - Applications KW - Ultraviolet KW - Oriented KW - Oxide KW - P KW - Time KW - Ca KW - Form KW - Process KW - Vapor KW - Excitation KW - Zinc KW - Array KW - Energies KW - Dc KW - Ha KW - Microanalysis KW - Length KW - Arrays KW - D KW - Diameter KW - Light KW - Linewidth KW - Nanometer KW - Nanowire KW - Nanowires KW - Optical gain KW - Oxide nanowires KW - Quantum KW - Room temperature KW - Room temperature KW - Sapphire KW - Sapphire substrate KW - Sapphire substrates KW - Semiconductor KW - Semiconductor nanowires KW - Storage KW - Substrate KW - Substrates KW - Vapor transport KW - Zinc oxide KW - Zinc-oxide KW - Zno AU - Michael H Huang AU - Samuel S Mao AU - Henning Feick AU - Haoquan Yan AU - Yiying Wu AU - Hannes Kind AU - Eicke R Weber AU - Richard E Russo AU - Peidong Yang AB -

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

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Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA Univ Calif Berkeley, Lawrence Berkeley Lab, Environm Energy Technol Div, Berkeley, CA 94720 USA Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA

BT - Science C2 - LBNL-48421 DA - 06/2001 DO - 10.1126/science.1060367 IS - 5523 LA - eng N1 -

LBNL-48421 NOT IN FILE

N2 -

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

PY - 2001 RP - Laser SP - 1897 EP - 1899 T2 - Science TI - Room-temperature ultraviolet nanowire nanolasers VL - 292 ER -