@article{25135,
  keywords = {Condensation, Energy, Transportation, USA, Emission, Band gap, Laser, Applications, Ultraviolet, Oriented, Oxide, P, Time, Ca, Form, Process, Vapor, Excitation, Zinc, Array, Energies, Dc, Ha, Microanalysis, Length, Arrays, D, Diameter, Light, Linewidth, Nanometer, Nanowire, Nanowires, Optical gain, Oxide nanowires, Quantum, Room temperature, Room temperature, Sapphire, Sapphire substrate, Sapphire substrates, Semiconductor, Semiconductor nanowires, Storage, Substrate, Substrates, Vapor transport, Zinc oxide, Zinc-oxide, Zno},
  author = {Michael H Huang and Samuel S Mao and Henning Feick and Haoquan Yan and Yiying Wu and Hannes Kind and Eicke R Weber and Richard E Russo and Peidong Yang},
  title = {Room-temperature ultraviolet nanowire nanolasers},
  abstract = {<p>Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis</p>},
  year = {2001},
  journal = {Science},
  volume = {292},
  pages = {1897-1899},
  month = {06/2001},
  doi = {10.1126/science.1060367 },
  note = {<p>LBNL-48421 NOT IN FILE</p>},
  language = {eng},
}