Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering
Date Published |
05/2007
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Publication Type | Journal Article
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Authors | |
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DOI |
10.1016/j.tsf.2006.12.179
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LBL Report Number |
LBNL-62248
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Abstract |
Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures |
Journal |
Thin Solid Films
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Volume |
515
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Year of Publication |
2007
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Issue |
13
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Number |
8
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Pagination |
5264-5269
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Custom 1 |
<p>Windows and Daylighting Group</p>
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Research Areas | |
File(s) | |
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