%0 Journal Article
%K Optical properties
%K Dual magnetron sputtering
%K Electrical resistivity
%K Er ion implantation
%K Tungsten oxide films
%A Sodky H Mohamed
%A André Anders
%B Thin Solid Films
%D 2007
%G eng
%N 13
%P 5264-5269
%R 10.1016/j.tsf.2006.12.179
%T Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering
%V 515
%1 <p>Windows and Daylighting Group</p>
%2 LBNL-62248
%8 05/2007
%X <p>Amorphous and partially crystalline WO<sub>3</sub> thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 10<sup>14</sup> to 5 x 10<sup>15</sup> ions/cm<sup>2</sup>. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures</p>