@article{23898,
  keywords = {Optical properties, Dual magnetron sputtering, Electrical resistivity, Er ion implantation, Tungsten oxide films},
  author = {Sodky H Mohamed and André Anders},
  title = {Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering},
  abstract = {<p>Amorphous and partially crystalline WO<sub>3</sub> thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 10<sup>14</sup> to 5 x 10<sup>15</sup> ions/cm<sup>2</sup>. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures</p>},
  year = {2007},
  journal = {Thin Solid Films},
  volume = {515},
  number = {8},
  pages = {5264-5269},
  month = {05/2007},
  doi = {10.1016/j.tsf.2006.12.179},
  language = {eng},
}