High Speed Epitaxial Perovskite Memory on Flexible Substrates

Publication Type
Journal Article
Authors
DOI
10.1002/adma.201605699
Abstract
Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.
Notes
cited By 34
Journal
Advanced Materials
Volume
29
Year of Publication
2017
Number
11
Publisher
Wiley-VCH Verlag
ISSN Number
09359648
Keywords
Research Areas
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