High Speed Epitaxial Perovskite Memory on Flexible Substrates
Publication Type | Journal Article
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Authors | |
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DOI |
10.1002/adma.201605699
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Abstract |
Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.
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Notes |
cited By 34
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Journal |
Advanced Materials
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Volume |
29
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Year of Publication |
2017
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Number |
11
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Publisher |
Wiley-VCH Verlag
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ISSN Number |
09359648
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Keywords | |
Research Areas | |
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