%0 Journal Article
%K Perovskite
%K Substrates
%K Ferroelectric materials
%K Epitaxial growth
%K Single crystals
%K Complex oxides
%K Remnant polarizations
%K Flexible electronics
%K Best value
%K Flexible substrate
%K High Speed
%K Lattice-matched substrates
%K Layer transfer
%K Switching speed
%A S.R Bakaul
%A C.R Serrao
%A O Lee
%A Z Lu
%A Ajay K Yadav
%A C Carraro
%A R Maboudian
%A Ramamoorthy Ramesh
%A S Salahuddin
%B Advanced Materials
%D 2017
%G eng
%I Wiley-VCH Verlag
%R 10.1002/adma.201605699
%T High Speed Epitaxial Perovskite Memory on Flexible Substrates
%V 29
%X Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.