TY - JOUR
KW - Perovskite
KW - Substrates
KW - Ferroelectric materials
KW - Epitaxial growth
KW - Single crystals
KW - Complex oxides
KW - Remnant polarizations
KW - Flexible electronics
KW - Best value
KW - Flexible substrate
KW - High Speed
KW - Lattice-matched substrates
KW - Layer transfer
KW - Switching speed
AU - S.R Bakaul
AU - C.R Serrao
AU - O Lee
AU - Z Lu
AU - Ajay K Yadav
AU - C Carraro
AU - R Maboudian
AU - Ramamoorthy Ramesh
AU - S Salahuddin
AB - Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.
BT - Advanced Materials
DO - 10.1002/adma.201605699
LA - eng
M1 - 11
N1 - cited By 34
N2 - Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.
PB - Wiley-VCH Verlag
PY - 2017
T2 - Advanced Materials
TI - High Speed Epitaxial Perovskite Memory on Flexible Substrates
VL - 29
SN - 09359648
ER -