@article{33380,
  keywords = {Perovskite, Substrates, Ferroelectric materials, Epitaxial growth, Single crystals, Complex oxides, Remnant polarizations, Flexible electronics, Best value, Flexible substrate, High Speed, Lattice-matched substrates, Layer transfer, Switching speed},
  author = {S.R Bakaul and C.R Serrao and O Lee and Z Lu and Ajay K Yadav and C Carraro and R Maboudian and Ramamoorthy Ramesh and S Salahuddin},
  title = {High Speed Epitaxial Perovskite Memory on Flexible Substrates},
  abstract = {Researchers demonstrate integration of <001> oriented single crystal PZT memory devices on a flexible substrate by using a layer transfer technique. The transferred PZT shows a remnant polarization of approximately 75 ΜC cm-2 on the flexible substrate, comparable to the best values achievable in an epitaxial film grown on a lattice matched substrate. The researchers also demonstrate switching speed of 57 ns at 4 V, which is at least one order of magnitude faster than any previous demonstration on a bent substrate.},
  year = {2017},
  journal = {Advanced Materials},
  volume = {29},
  number = {11},
  publisher = {Wiley-VCH Verlag},
  issn = {09359648},
  doi = {10.1002/adma.201605699},
  note = {cited By 34},
  language = {eng},
}