Epitaxial BiFeO 3 thin films on Si
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.1799234
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Abstract |
The growth of epitaxial BiFeO 3 (BFO) thin films on Si substrate using pulsed laser deposition with SrTiO 3 (STO) as a template layer and SrRuO 3 (SRO) as a bottom electrode was investigated. The structure of the film was investigated using x-ray diffraction and transmission electron microscopy. It was observed that the value of spontaneous polarization of the films was ∼45 μC/Cm 2. The results show that the 400-nm-thick films has a large piezoelectric coefficient of ∼120 pm/V, which is useful to applications in actuators and microelectromechanical (MEMS) devices.
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Notes |
cited By 231
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Journal |
Applied Physics Letters
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Volume |
85
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Year of Publication |
2004
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Number |
13
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Pagination |
2574-2576
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ISSN Number |
00036951
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Keywords |
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Research Areas | |
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