%0 Journal Article
%K Thin films
%K Pulsed laser deposition
%K Molecular beam epitaxy
%K Transmission electron microscopy
%K Film growth
%K Ferroelectric materials
%K Bismuth compounds
%K Permittivity
%K Piezoelectricity
%K Electron diffraction
%K Actuators
%K Piezoelectric materials
%K Microelectromechanical devices
%K Hysteresis loops
%K X-ray diffraction analysis
%K Piezoelectric coefficients
%K Compressive stress
%K Electromagnetic wave polarization
%K Heteroepitaxial growth
%K Pulsed remnant polarization
%K Thermal stress
%A J Wang
%A H Zheng
%A Z Ma
%A S Prasertchoung
%A M Wuttig
%A R Droopad
%A J Yu
%A K Eisenbeiser
%A Ramamoorthy Ramesh
%B Applied Physics Letters
%D 2004
%G eng
%P 2574-2576
%R 10.1063/1.1799234
%T Epitaxial BiFeO 3 thin films on Si
%V 85
%X The growth of epitaxial BiFeO 3 (BFO) thin films on Si substrate using pulsed laser deposition with SrTiO 3 (STO) as a template layer and SrRuO 3 (SRO) as a bottom electrode was investigated. The structure of the film was investigated using x-ray diffraction and transmission electron microscopy. It was observed that the value of spontaneous polarization of the films was ∼45 μC/Cm 2. The results show that the 400-nm-thick films has a large piezoelectric coefficient of ∼120 pm/V, which is useful to applications in actuators and microelectromechanical (MEMS) devices.