@article{33663,
  keywords = {Thin films, Pulsed laser deposition, Molecular beam epitaxy, Transmission electron microscopy, Film growth, Ferroelectric materials, Bismuth compounds, Permittivity, Piezoelectricity, Electron diffraction, Actuators, Piezoelectric materials, Microelectromechanical devices, Hysteresis loops, X-ray diffraction analysis, Piezoelectric coefficients, Compressive stress, Electromagnetic wave polarization, Heteroepitaxial growth, Pulsed remnant polarization, Thermal stress},
  author = {J Wang and H Zheng and Z Ma and S Prasertchoung and M Wuttig and R Droopad and J Yu and K Eisenbeiser and Ramamoorthy Ramesh},
  title = {Epitaxial BiFeO 3 thin films on Si},
  abstract = {The growth of epitaxial BiFeO 3 (BFO) thin films on Si substrate using pulsed laser deposition with SrTiO 3 (STO) as a template layer and SrRuO 3 (SRO) as a bottom electrode was investigated. The structure of the film was investigated using x-ray diffraction and transmission electron microscopy. It was observed that the value of spontaneous polarization of the films was ∼45 μC/Cm 2. The results show that the 400-nm-thick films has a large piezoelectric coefficient of ∼120 pm/V, which is useful to applications in actuators and microelectromechanical (MEMS) devices.},
  year = {2004},
  journal = {Applied Physics Letters},
  volume = {85},
  number = {13},
  pages = {2574-2576},
  issn = {00036951},
  doi = {10.1063/1.1799234},
  note = {cited By 231},
  language = {eng},
}