Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.1544057
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Abstract |
Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.
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Notes |
cited By 36
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Journal |
Applied Physics Letters
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Volume |
82
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Year of Publication |
2003
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Number |
8
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Pagination |
1263-1265
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ISSN Number |
00036951
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Keywords | |
Research Areas | |
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