Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering

Publication Type
Journal Article
Authors
DOI
10.1063/1.1544057
Abstract
Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.
Notes
cited By 36
Journal
Applied Physics Letters
Volume
82
Year of Publication
2003
Number
8
Pagination
1263-1265
ISSN Number
00036951
Keywords
Research Areas
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