@article{33697,
  keywords = {Nucleation, Microstructure, Electrodes, Film growth, Crystallization, Ferroelectric thin films, Capacitors, Sol-gels, Saturation voltage},
  author = {K Maki and B.T Liu and H Vu and V Nagarajan and Ramamoorthy Ramesh and Y Fujimori and T Nakamura and H Takasu},
  title = {Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering},
  abstract = {Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.},
  year = {2003},
  journal = {Applied Physics Letters},
  volume = {82},
  number = {8},
  pages = {1263-1265},
  issn = {00036951},
  doi = {10.1063/1.1544057},
  note = {cited By 36},
  language = {eng},
}