TY - JOUR
KW - Nucleation
KW - Microstructure
KW - Electrodes
KW - Film growth
KW - Crystallization
KW - Ferroelectric thin films
KW - Capacitors
KW - Sol-gels
KW - Saturation voltage
AU - K Maki
AU - B.T Liu
AU - H Vu
AU - V Nagarajan
AU - Ramamoorthy Ramesh
AU - Y Fujimori
AU - T Nakamura
AU - H Takasu
AB - Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.
BT - Applied Physics Letters
DO - 10.1063/1.1544057
LA - eng
M1 - 8
N1 - cited By 36
N2 - Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.
PY - 2003
SP - 1263
EP - 1265
T2 - Applied Physics Letters
TI - Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering
VL - 82
SN - 00036951
ER -