%0 Journal Article
%K Nucleation
%K Microstructure
%K Electrodes
%K Film growth
%K Crystallization
%K Ferroelectric thin films
%K Capacitors
%K Sol-gels
%K Saturation voltage
%A K Maki
%A B.T Liu
%A H Vu
%A V Nagarajan
%A Ramamoorthy Ramesh
%A Y Fujimori
%A T Nakamura
%A H Takasu
%B Applied Physics Letters
%D 2003
%G eng
%P 1263-1265
%R 10.1063/1.1544057
%T Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering
%V 82
%X Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.