Analysis of thin PZT films as a function of depth and thickness by GIXS

Publication Type	Journal Article

Authors	M Petit V Nagarajan S Aggarwal Ramamoorthy Ramesh L.J Martínez-Miranda
DOI	10.1080/10584580008216680
Abstract	We have performed depth profile studies on PZT films of different thickness. Thin epitaxial films of PbZr0.2Ti0.8O3 have been deposited on mono-crystalline (001) LaAlO3 substrate by pulsed laser deposition. Grazing incidence X-ray scattering was used to study the films' structure. GIXS technique was used to analyze the in-plane compression of lattice parameters as a function of depth within the films. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
Notes	cited By 2
Journal	Integrated Ferroelectrics
Volume	29
Year of Publication	2000
Number	1-2
Pagination	127-141
Publisher	Taylor and Francis Inc.
ISSN Number	10584587
Keywords	Thin films Lattice constants Excimer lasers Lanthanum compounds X-ray scattering Epitaxial ferroelectric films Lead zirconate titanate (PZT) Semiconducting lead compounds Strain Pulsed laser applications Mapping Depth analysis Film structure Grazing incident x-ray scattering (GIXS)
Organizations	No Organization
Research Areas	Ramesh Lab
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