TY - JOUR
KW - Thin films
KW - Lattice constants
KW - Excimer lasers
KW - Lanthanum compounds
KW - X-ray scattering
KW - Epitaxial ferroelectric films
KW - Lead zirconate titanate (PZT)
KW - Semiconducting lead compounds
KW - Strain
KW - Pulsed laser applications
KW - Mapping
KW - Depth analysis
KW - Film structure
KW - Grazing incident x-ray scattering (GIXS)
AU - M Petit
AU - V Nagarajan
AU - S Aggarwal
AU - Ramamoorthy Ramesh
AU - L.J Martínez-Miranda
AB - We have performed depth profile studies on PZT films of different thickness. Thin epitaxial films of PbZr0.2Ti0.8O3 have been deposited on mono-crystalline (001) LaAlO3 substrate by pulsed laser deposition. Grazing incidence X-ray scattering was used to study the films' structure. GIXS technique was used to analyze the in-plane compression of lattice parameters as a function of depth within the films. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
BT - Integrated Ferroelectrics
DO - 10.1080/10584580008216680
LA - eng
M1 - 1-2
N1 - cited By 2
N2 - We have performed depth profile studies on PZT films of different thickness. Thin epitaxial films of PbZr0.2Ti0.8O3 have been deposited on mono-crystalline (001) LaAlO3 substrate by pulsed laser deposition. Grazing incidence X-ray scattering was used to study the films' structure. GIXS technique was used to analyze the in-plane compression of lattice parameters as a function of depth within the films. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
PB - Taylor and Francis Inc.
PY - 2000
SP - 127
EP - 141
T2 - Integrated Ferroelectrics
TI - Analysis of thin PZT films as a function of depth and thickness by GIXS
VL - 29
SN - 10584587
ER -