Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.1391237
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Abstract |
Conducting diffusion barrier layers play a critical role in high-density memory integration. We recently demonstrated that Ti-Al can be used as a diffusion barrier layer for the integration of ferroelectric capacitors with complementary metal-oxide semiconductor devices for the fabrication of nonvolatile ferroelectric random access memories (NVFRAMs). Here, we discuss results from systematic studies designed to understand Ti-Al film growth and oxidation processes using in situ ion beam sputter deposition in conjunction with complementary in situ atomic layer-resolution mass spectroscopy of recoil ion (MSRI) and surface sensitive x-ray photoelectron spectroscopy (XPS). The concurrent MSRI/XPS analysis revealed that amorphous Ti-Al layers produced by tailored sputter-deposition methods are resistant to oxidation to at least 600 °C, and that oxidation occurs only when the a-Ti-Al layers are exposed to oxygen at >600 °C, via the segregation of Ti species to the surface and TiO2 formation. The a-Ti-Al layers discussed in this letter could be used in the double functionality of a bottom electrode/diffusion barrier for the integration of ferroelectric capacitors with Si substrates for the fabrication of NVFRAMs and other devices. © 2001 American Institute of Physics.
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Notes |
cited By 18
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Journal |
Applied Physics Letters
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Volume |
79
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Year of Publication |
2001
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Number |
6
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Pagination |
800-802
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ISSN Number |
00036951
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Research Areas | |
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