Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering

Publication Type	Journal Article

Authors	K Maki B.T Liu H Vu V Nagarajan Ramamoorthy Ramesh Y Fujimori T Nakamura H Takasu
DOI	10.1063/1.1544057
Abstract	Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering was analyzed. It was found that well-behaved PZT films on SRO/IrO2-Si could be fully crystallized at 450°C using a modified sol-gel solution. The crystallization temperature was lower than that of PZT films on IrO2-Si.
Notes	cited By 36
Journal	Applied Physics Letters
Volume	82
Year of Publication	2003
Number	8
Pagination	1263-1265
ISSN Number	00036951
Keywords	Nucleation Microstructure Electrodes Film growth Crystallization Ferroelectric thin films Capacitors Sol-gels Saturation voltage
Organizations	No Organization
Research Areas	Ramesh Lab
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