Epitaxial BiFeO 3 thin films on Si

Publication Type
Journal Article
Authors
DOI
10.1063/1.1799234
Abstract
The growth of epitaxial BiFeO 3 (BFO) thin films on Si substrate using pulsed laser deposition with SrTiO 3 (STO) as a template layer and SrRuO 3 (SRO) as a bottom electrode was investigated. The structure of the film was investigated using x-ray diffraction and transmission electron microscopy. It was observed that the value of spontaneous polarization of the films was ∼45 μC/Cm 2. The results show that the 400-nm-thick films has a large piezoelectric coefficient of ∼120 pm/V, which is useful to applications in actuators and microelectromechanical (MEMS) devices.
Notes
cited By 231
Journal
Applied Physics Letters
Volume
85
Year of Publication
2004
Number
13
Pagination
2574-2576
ISSN Number
00036951
Keywords
Research Areas
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