Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor
Publication Type | Journal Article
|
---|
Authors | |
---|---|
DOI |
10.1109/LED.2015.2501319
|
Abstract |
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation. © 2015 IEEE.
|
Notes |
cited By 106
|
Journal |
IEEE Electron Device Letters
|
Volume |
37
|
Year of Publication |
2016
|
Number |
1
|
Pagination |
111-114
|
Publisher |
Institute of Electrical and Electronics Engineers Inc.
|
ISSN Number |
07413106
|
Keywords |
|
Research Areas | |
Download citation |