Photovoltaic effects in BiFeO3
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.3204695
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Abstract |
We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3 /tin doped indium oxide interface. © 2009 American Institute of Physics.
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Notes |
cited By 404
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Journal |
Applied Physics Letters
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Volume |
95
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Year of Publication |
2009
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Number |
6
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ISSN Number |
00036951
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Keywords |
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Research Areas | |
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