%0 Journal Article
%K Electric potential
%K Indium
%K Tin
%K Ferroelectricity
%K Ferroelectric polarization
%K Oxide heterostructures
%K Photovoltaic effects
%K Semiconducting bismuth compounds
%K Band offsets
%K External quantum efficiency
%K Maximum Efficiency
%K Open-circuit voltages
%K Order of magnitude
%K Tin doped indium oxide
%K Semiconducting indium compounds
%A S.Y Yang
%A L.W Martin
%A S.J Byrnes
%A T.E Conry
%A S.R Basu
%A D Paran
%A L Reichertz
%A J Ihlefeld
%A C Adamo
%A A Melville
%A Y.-H Chu
%A C.-H Yang
%A J.L Musfeldt
%A D.G Schlom
%A Joel W Ager
%A Ramamoorthy Ramesh
%B Applied Physics Letters
%D 2009
%G eng
%R 10.1063/1.3204695
%T Photovoltaic effects in BiFeO3
%V 95
%X We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3 /tin doped indium oxide interface. © 2009 American Institute of Physics.