@article{33548,
  keywords = {electric potential, indium, tin, ferroelectricity, Ferroelectric polarization, Oxide heterostructures, Photovoltaic effects, Semiconducting bismuth compounds, Band offsets, External quantum efficiency, Maximum Efficiency, Open-circuit voltages, Order of magnitude, Tin doped indium oxide, Semiconducting indium compounds},
  author = {S.Y Yang and L.W Martin and S.J Byrnes and T.E Conry and S.R Basu and D Paran and L Reichertz and J Ihlefeld and C Adamo and A Melville and Y.-H Chu and C.-H Yang and J.L Musfeldt and D.G Schlom and Joel W Ager and Ramamoorthy Ramesh},
  title = {Photovoltaic effects in BiFeO3},
  abstract = {We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3 /tin doped indium oxide interface. © 2009 American Institute of Physics.},
  year = {2009},
  journal = {Applied Physics Letters},
  volume = {95},
  number = {6},
  issn = {00036951},
  doi = {10.1063/1.3204695},
  note = {cited By 404},
  language = {eng},
}