Oxide electrodes for buried-channel field effect transistors

Publication Type
Journal Article
Authors
Abstract
In this paper we describe the fabrication of oxide based electrodes that allow epitaxial growth of multilayer structures used to fabricate buried oxide-channel field effect transistors. The distinct characteristic of our buried electrodes is that they provide an etch stop layer which allow the opening of vias through the gate oxide using chemical etching. They can be Patterned to define 1 μm channel lengths and exhibit low contact resistance with channel materials such as YxPr1-xBa2Cu3O7-δ (YPBCO) or YBa2Cu3O7-δ (YBCO).
Notes
cited By 1
Journal
Materials Research Society Symposium - Proceedings
Volume
666
Year of Publication
2001
Pagination
F541-F546
ISSN Number
02729172
Keywords
Research Areas
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