TY - JOUR
KW - Electrodes
KW - Multilayers
KW - Etching
KW - Epitaxial growth
KW - Field effect transistors
KW - Electric resistance
KW - Yttrium barium copper oxides
KW - Oxide electrodes
AU - A.G Schrott
AU - J.A Misewich
AU - D.W Abraham
AU - Ramamoorthy Ramesh
AU - V Nagarajan
AB - In this paper we describe the fabrication of oxide based electrodes that allow epitaxial growth of multilayer structures used to fabricate buried oxide-channel field effect transistors. The distinct characteristic of our buried electrodes is that they provide an etch stop layer which allow the opening of vias through the gate oxide using chemical etching. They can be Patterned to define 1 μm channel lengths and exhibit low contact resistance with channel materials such as YxPr1-xBa2Cu3O7-δ (YPBCO) or YBa2Cu3O7-δ (YBCO).
BT - Materials Research Society Symposium - Proceedings
LA - eng
N1 - cited By 1
N2 - In this paper we describe the fabrication of oxide based electrodes that allow epitaxial growth of multilayer structures used to fabricate buried oxide-channel field effect transistors. The distinct characteristic of our buried electrodes is that they provide an etch stop layer which allow the opening of vias through the gate oxide using chemical etching. They can be Patterned to define 1 μm channel lengths and exhibit low contact resistance with channel materials such as YxPr1-xBa2Cu3O7-δ (YPBCO) or YBa2Cu3O7-δ (YBCO).
PY - 2001
SP - F541
EP - F546
T2 - Materials Research Society Symposium - Proceedings
TI - Oxide electrodes for buried-channel field effect transistors
VL - 666
SN - 02729172
ER -