Interfaces in ferroelectric metal oxide heterostructures

Realization of a viable nonvolatile ferroelectric thin film memory technology hinges on the successful solution of the reliability problems associated with the ferroelectric capacitor concurrent with the integration of these materials with the appropriate Si-CMOS based drive electronics. This integration process introduces a variety of structural, chemical, ionic and electronic interfaces in the memory elements. In this paper, the influence of some of the interfaces on the ferroelectric properties and on the process integration is discussed.