TY - CPAPER
KW - Ferroelectric materials
KW - Ferroelectricity
KW - Thin film devices
KW - Random access storage
KW - CMOS integrated circuits
KW - Ferroelectric devices
KW - Interfaces (materials)
KW - Semiconducting silicon
KW - Ferroelectric capacitor
KW - Ceramic capacitors
KW - Semiconductor device structures
KW - Ferroelectric metal oxide heterostructures
AU - Ramamoorthy Ramesh
AU - J Lee
AU - V.G Keramidas
AU - D.K Fork
AU - S Ghonge
AU - E Goo
AU - O Auciello
AB - Realization of a viable nonvolatile ferroelectric thin film memory technology hinges on the successful solution of the reliability problems associated with the ferroelectric capacitor concurrent with the integration of these materials with the appropriate Si-CMOS based drive electronics. This integration process introduces a variety of structural, chemical, ionic and electronic interfaces in the memory elements. In this paper, the influence of some of the interfaces on the ferroelectric properties and on the process integration is discussed.
BT - Proceedings of the Materials Research Society Symposium -
LA - eng
N1 - cited By 0
N2 - Realization of a viable nonvolatile ferroelectric thin film memory technology hinges on the successful solution of the reliability problems associated with the ferroelectric capacitor concurrent with the integration of these materials with the appropriate Si-CMOS based drive electronics. This integration process introduces a variety of structural, chemical, ionic and electronic interfaces in the memory elements. In this paper, the influence of some of the interfaces on the ferroelectric properties and on the process integration is discussed.
PB - Materials Research Society, Pittsburgh, PA, United States
PY - 1994
SP - 431
EP - 443
T2 - Proceedings of the Materials Research Society Symposium -
T3 - Materials Research Society Symposium -
TI - Interfaces in ferroelectric metal oxide heterostructures
VL - 343
SN - 02729172
ER -