Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition
Date Published |
03/2012
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Publication Type | Journal Article
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Authors | |
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DOI |
10.1557/jmr.2011.342
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Abstract |
Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films. |
Journal |
Journal of Materials Research
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Volume |
27
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Year of Publication |
2012
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Issue |
05
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Pagination |
857 - 862
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ISSN Number |
0884-2914
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Short Title |
J. Mater. Res.
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Keywords | |
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Research Areas | |
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