@article{26700,
  keywords = {Physical vapor deposition, Plasma deposition, Transparent conductor},
  author = {Yuankun Zhu and Rueben J Mendelsberg and Sunnie H.N Lim and Jiaqi Zhu and Jiecai Han and André Anders},
  title = {Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition},
  abstract = {<p>Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm<sup>2</sup>/Vs and a low resistivity of 6.5 × 10<sup>−4</sup> Ωcm. Resistivity as low as 5.2 × 10<sup>−4</sup> Ωcm and mobility as high as 43.5 cm<sup>2</sup>/Vs are obtained for 135-nm films.</p>},
  year = {2012},
  journal = {Journal of Materials Research},
  volume = {27},
  pages = {857 - 862},
  month = {03/2012},
  issn = {0884-2914},
  doi = {10.1557/jmr.2011.342},
}