%0 Journal Article
%K Physical vapor deposition
%K Plasma deposition
%K Transparent conductor
%A Yuankun Zhu
%A Rueben J Mendelsberg
%A Sunnie H.N Lim
%A Jiaqi Zhu
%A Jiecai Han
%A André Anders
%B Journal of Materials Research
%D 2012
%N 05
%P 857 - 862
%R 10.1557/jmr.2011.342
%T Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition
%V 27
%8 03/2012
%! J. Mater. Res.
%X <p>Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm<sup>2</sup>/Vs and a low resistivity of 6.5 × 10<sup>−4</sup> Ωcm. Resistivity as low as 5.2 × 10<sup>−4</sup> Ωcm and mobility as high as 43.5 cm<sup>2</sup>/Vs are obtained for 135-nm films.</p>