Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon

Publication Type
Journal Article
Authors
DOI
10.1063/1.106199
Abstract
The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO 2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0°-1.2°for the bismuth titanate layer and 0.6°-0.8°for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45°to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180-200.
Notes
cited By 49
Journal
Applied Physics Letters
Volume
59
Year of Publication
1991
Number
14
Pagination
1782-1784
ISSN Number
00036951
Research Areas
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