%0 Journal Article
%A Ramamoorthy Ramesh
%A A Inam
%A B Wilkens
%A W.K Chan
%A T Sands
%A J.M Tarascon
%A D.K Fork
%A T.H Geballe
%A J Evans
%A J Bullington
%B Applied Physics Letters
%D 1991
%G eng
%P 1782-1784
%R 10.1063/1.106199
%T Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon
%V 59
%X The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO 2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0°-1.2°for the bismuth titanate layer and 0.6°-0.8°for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45°to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180-200.